SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE

摘要

Current detection circuit of a semiconductor device provided with a shunt resistor, a voltage division ratio adjustment resistor and a selection circuit which selects a voltage division ratio of the latter and has enhancement type MOSFETs and Zener Zaps as trimming elements. One of the Zener Zaps is trimmed and a divided voltage of the voltage division ratio adjustment resistor connected in parallel with the shunt resistor is outputted. The detected voltage in which variation of the resistance of the shunt resistor has been cancelled is therefore outputted. As the shunt resistor and the voltage division ratio adjustment resistor are laminated together, it is possible to obtain a current detection circuit with a small area, which can detect a current flowing into a shunt resistor with high accuracy.

主权项

1. A semiconductor device comprising a voltage detection circuit including:
a current detection resistor; a voltage division ratio adjustment resistor which is connected in parallel with the current detection resistor and which is higher in resistance than the current detection resistor, the voltage division ratio adjustment resistor having a plurality of voltage division points dividing it into different voltage division ratios respectively; and a selection circuit which selects a voltage division point; wherein: the current detection resistor, the voltage division ratio adjustment resistor and the selection circuit are provided in the same semiconductor substrate, and the selection circuit selects one of the voltage division points based on a resistance value of the current detection resistor so that the voltage detection circuit outputs a voltage at the voltage division point selected by the selection circuit as a detected voltage.