| 摘要 |
PROBLEM TO BE SOLVED: To provide an art to inhibit gate interference in an RC-IGBT which employs a diode structure having Schottky connection.SOLUTION: A semiconductor device has a semiconductor substrate 12 having a diode region 92 and an IGBT region 90. In the semiconductor device, the diode region 92 has a p-type anode region 34 which forms ohmic connection with an anode electrode 14, a plurality of n-type pillar regions 24 which form Schottky connection with the anode electrode 14, an n-type barrier region 26, an n-type diode drift region 28, and an n-type cathode region 36. On-resistance of a first pillar region 24a against the anode electrode 14 is higher than on-resistance of a second pillar region 24b located close to the IGBT region 90 against the anode electrode 14. |
