发明名称 |
STACKED SEMICONDUCTOR DEVICE |
摘要 |
A stacked semiconductor device includes a first pair of vertically stacked self-aligned nanowires, a second pair of vertically stacked self-aligned nanowires, and a gate upon a semiconductor substrate, the gate surrounding portions of the first pair of vertically stacked self-aligned nanowires and the second pair of vertically stacked self-aligned nanowires. First epitaxy may merge the first pair of vertically stacked self-aligned nanowires and second epitaxy may merge second pair of vertically stacked self-aligned nanowires. The stacked semiconductor device may be fabricated by forming a lattice-fin upon the semiconductor substrate and the gate surrounding a portion of the lattice-fin. The vertically stacked self-aligned nanowires may be formed by selectively removing a plurality of layers from the lattice-fin. |
申请公布号 |
US2015263088(A1) |
申请公布日期 |
2015.09.17 |
申请号 |
US201414215398 |
申请日期 |
2014.03.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Cheng Kangguo;Khakifirooz Ali;Reznicek Alexander;Schepis Dominic J. |
分类号 |
H01L29/06;H01L29/15;H01L27/088;H01L21/8234;H01L29/78;H01L29/66 |
主分类号 |
H01L29/06 |
代理机构 |
|
代理人 |
|
主权项 |
1. A stacked semiconductor device fabrication process comprising:
forming a lattice-fin upon a semiconductor substrate; forming a gate upon the semiconductor substrate surrounding a portion of the lattice-fin; forming vertically stacked self-aligned nanowires by selectively removing a plurality of layers from the lattice-fin, and; forming first epitaxy upon sidewalls of a plurality of vertically stacked self-aligned nanowires in a first nanowire group, the first epitaxy merging the first nanowire group in source and drain regions of the stacked semiconductor device. |
地址 |
Armonk NY US |