发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 According to one embodiment, a method for manufacturing a semiconductor device, including: detecting whether or not a defect being present in a wafer substrate and obtaining coordinate information of the defect; and determining positions of a first disposal region and a second disposal region in a semiconductor chip region based on the coordinate information so that the defect falls in the first disposal region in disposing in a plane of the semiconductor chip region having the first disposal region on which a first diode having a first conductivity type region and a second conductivity type region being disposed and the second disposal region on which a second diode having a metal film and a semiconductor region contacting the metal film being disposed.
申请公布号 US2015262889(A1) 申请公布日期 2015.09.17
申请号 US201414465539 申请日期 2014.08.21
申请人 Kabushiki Kaisha Toshiba 发明人 Yamashita Atsuko;Hori Yoichi;Noda Takao;Kono Hiroshi
分类号 H01L21/66;H01L29/66 主分类号 H01L21/66
代理机构 代理人
主权项 1. A method for manufacturing a semiconductor device, comprising: detecting whether or not a defect being present in a wafer substrate and obtaining coordinate information of the defect; and determining positions of a first disposal region and a second disposal region in a semiconductor chip region based on the coordinate information so that the defect falls in the first disposal region in disposing in a plane of the semiconductor chip region having the first disposal region on which a first diode having a first conductivity type region and a second conductivity type region being disposed and the second disposal region on which a second diode having a metal film and a semiconductor region contacting the metal film being disposed.
地址 Tokyo JP