发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
According to one embodiment, a method for manufacturing a semiconductor device, including: detecting whether or not a defect being present in a wafer substrate and obtaining coordinate information of the defect; and determining positions of a first disposal region and a second disposal region in a semiconductor chip region based on the coordinate information so that the defect falls in the first disposal region in disposing in a plane of the semiconductor chip region having the first disposal region on which a first diode having a first conductivity type region and a second conductivity type region being disposed and the second disposal region on which a second diode having a metal film and a semiconductor region contacting the metal film being disposed. |
申请公布号 |
US2015262889(A1) |
申请公布日期 |
2015.09.17 |
申请号 |
US201414465539 |
申请日期 |
2014.08.21 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Yamashita Atsuko;Hori Yoichi;Noda Takao;Kono Hiroshi |
分类号 |
H01L21/66;H01L29/66 |
主分类号 |
H01L21/66 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method for manufacturing a semiconductor device, comprising:
detecting whether or not a defect being present in a wafer substrate and obtaining coordinate information of the defect; and determining positions of a first disposal region and a second disposal region in a semiconductor chip region based on the coordinate information so that the defect falls in the first disposal region in disposing in a plane of the semiconductor chip region having the first disposal region on which a first diode having a first conductivity type region and a second conductivity type region being disposed and the second disposal region on which a second diode having a metal film and a semiconductor region contacting the metal film being disposed. |
地址 |
Tokyo JP |