发明名称 METHOD FOR FORMING AN ELECTRICALLY CONDUCTIVE VIA IN A SUBSTRATE
摘要 The invention relates to a method for forming an electrically conductive via in a substrate and such a substrate comprising an electrically conductive, said method comprising the steps, to be performed in suitable sequence, of: a) providing a first substrate as said substrate; b) forming a through hole in said first substrate; c) providing a second substrate; d) bringing a first surface of said second substrate into contact with said first surface of said first substrate, such that said through hole in said first substrate is covered by said first surface of said second substrate; e) filling said through hole in said first substrate with an electrically conductive material by means of electroplating for forming said electrically conductive via, and f) removing said second substrate, wherein said first surface of said first substrate and said first surface of said second substrate each have a surface roughness R a of less than 2 nm, preferably less than 1 nm, more preferably less than 0.5 nm, and in that in step (d) said first surface of said first substrate and said first surface of said second substrate are brought in direct contact with each other, such that a direct bond is formed there between.
申请公布号 US2015262874(A1) 申请公布日期 2015.09.17
申请号 US201314440814 申请日期 2013.11.05
申请人 MICRONIT MICROFLUIDICS B.V. 发明人 Van'T Oever Ronny;Blom Marko Theodoor;Haneveld Jeroen;Oonk Johannes;Tijssen Peter
分类号 H01L21/768;H01L23/498;H01L21/48 主分类号 H01L21/768
代理机构 代理人
主权项 1. Method for forming an electrically conductive via in a substrate, said method comprising the steps, to be performed in suitable sequence, of: a) providing a first substrate as said substrate; b) forming a through hole in said first substrate, said through hole extending between a first surface and a second surface of said first substrate; c) providing a second substrate; d) bringing a first surface of said second substrate into contact with said first surface of said first substrate, such that said through hole in said first substrate is covered by said first surface of said second substrate; e) filling said through hole in said first substrate with an electrically conductive material by means of electroplating for forming said electrically conductive via, wherein said electrically conductive material is deposited on said first surface of said second substrate, and f) removing said second substrate, characterized in that said first surface of said first substrate and said first surface of said second substrate each have a surface roughness Ra of less than 2 nm, preferably less than 1 nm, more preferably less than 0.5 nm, and in that in step (d) said first surface of said first substrate and said first surface of said second substrate are brought in direct contact with each other, such that a direct bond is formed there between.
地址 Enschede NL