发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME |
摘要 |
A semiconductor memory device according to an embodiment comprises: a nonvolatile memory cell and a control circuit. The control circuit executes: a first write operation that performs a write on the memory cell using a first write voltage; a first verify operation that determines whether a threshold voltage of the memory cell exceeds a first threshold value due to the first write operation, or not; a second verify operation that re-determines on the memory cell that has passed the first verify operation whether the threshold voltage exceeds the first threshold value, or not; and a second write operation that performs a write on the memory cell that has not passed the second verify operation, using a second write voltage. |
申请公布号 |
US2015262679(A1) |
申请公布日期 |
2015.09.17 |
申请号 |
US201414457414 |
申请日期 |
2014.08.12 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIMURA Yasuhiro |
分类号 |
G11C16/10;G11C16/34;G11C16/04 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor memory device, comprising:
a nonvolatile memory cell; and a control circuit that performs write control on the memory cell, the control circuit executing: a first write operation that performs a write on the memory cell using a first write voltage; a first verify operation that determines whether a threshold voltage of the memory cell exceeds a first threshold value due to the first write operation, or not; a second verify operation that re-determines on the memory cell that has passed the first verify operation whether the threshold voltage exceeds the first threshold value, or not; and a second write operation that performs a write on the memory cell that has not passed the second verify operation, using a second write voltage. |
地址 |
Minato-ku JP |