发明名称 |
SEMICONDUCTOR DEVICE HAVING AIR-GAP |
摘要 |
A semiconductor device includes a bit line structure located on a semiconductor substrate, an outer bit line spacer located on a first side surface of the bit line structure, an inner bit line spacer including a first part located between the bit line structure and the outer bit line spacer and a second part located between the semiconductor substrate and the outer bit line spacer, and a block bit line spacer located between the outer bit line spacer and the second part of the inner bit line spacer. A first air-gap is defined by the outer bit line spacer, the inner bit line spacer, and the block bit line spacer. |
申请公布号 |
US2015262625(A1) |
申请公布日期 |
2015.09.17 |
申请号 |
US201414554113 |
申请日期 |
2014.11.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HAN JUNG-HOON;KIM DONG-WAN;LE JU-IK |
分类号 |
G11C5/06;H01L23/532;H01L27/105;H01L23/528 |
主分类号 |
G11C5/06 |
代理机构 |
|
代理人 |
|
主权项 |
1. A semiconductor device, comprising:
a bit line structure disposed on a semiconductor substrate; an outer bit line spacer disposed on a first side surface of the bit line structure; an inner bit line spacer including a first part disposed between the bit line structure and the outer bit line spacer, and a second part disposed between the semiconductor substrate and the outer bit line spacer; a block bit line spacer disposed between the outer bit line spacer and the second part of the inner bit line spacer; and a first air-gap defined by the outer bit line spacer, the inner bit line spacer, and the block bit line spacer. |
地址 |
Suwon-Si KR |