发明名称 SEMICONDUCTOR DEVICE HAVING AIR-GAP
摘要 A semiconductor device includes a bit line structure located on a semiconductor substrate, an outer bit line spacer located on a first side surface of the bit line structure, an inner bit line spacer including a first part located between the bit line structure and the outer bit line spacer and a second part located between the semiconductor substrate and the outer bit line spacer, and a block bit line spacer located between the outer bit line spacer and the second part of the inner bit line spacer. A first air-gap is defined by the outer bit line spacer, the inner bit line spacer, and the block bit line spacer.
申请公布号 US2015262625(A1) 申请公布日期 2015.09.17
申请号 US201414554113 申请日期 2014.11.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HAN JUNG-HOON;KIM DONG-WAN;LE JU-IK
分类号 G11C5/06;H01L23/532;H01L27/105;H01L23/528 主分类号 G11C5/06
代理机构 代理人
主权项 1. A semiconductor device, comprising: a bit line structure disposed on a semiconductor substrate; an outer bit line spacer disposed on a first side surface of the bit line structure; an inner bit line spacer including a first part disposed between the bit line structure and the outer bit line spacer, and a second part disposed between the semiconductor substrate and the outer bit line spacer; a block bit line spacer disposed between the outer bit line spacer and the second part of the inner bit line spacer; and a first air-gap defined by the outer bit line spacer, the inner bit line spacer, and the block bit line spacer.
地址 Suwon-Si KR