发明名称 METHOD OF GENERATING A SET OF DEFECT CANDIDATES FOR WAFER
摘要 A method of generating a set of defect candidates for a wafer is disclosed. The wafer comprises at least one die manufactured according to a mask, and the mask being prepared by combining a plurality of layout areas. The method includes receiving an initial defect information from a wafer scanning device indicating potential defects of a semiconductor wafer and determining a boundary region on the semiconductor wafer. The method further includes creating an exclusion region from the boundary region, the exclusion region having a first set of defects in the potential defects of the semiconductor wafer, and creating filtered defect information by removing the first set of defects from the initial defect information.
申请公布号 US2015261908(A1) 申请公布日期 2015.09.17
申请号 US201514723645 申请日期 2015.05.28
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 HSIEH Min-Hsin;LEE Tsung-Hsien
分类号 G06F17/50 主分类号 G06F17/50
代理机构 代理人
主权项 1. A method of generating a set of defect candidates for a wafer, the wafer comprising at least one die manufactured according to a mask, the mask being prepared by combining a plurality of layout areas, the method comprising: receiving an initial defect information from a wafer scanning device indicating potential defects of a semiconductor wafer; determining a boundary region on the semiconductor wafer; creating an exclusion region from the boundary region, the exclusion region having a first set of defects in the potential defects of the semiconductor wafer; and creating filtered defect information by removing the first set of defects from the initial defect information.
地址 Hsinchu TW