发明名称 |
METHOD OF GENERATING A SET OF DEFECT CANDIDATES FOR WAFER |
摘要 |
A method of generating a set of defect candidates for a wafer is disclosed. The wafer comprises at least one die manufactured according to a mask, and the mask being prepared by combining a plurality of layout areas. The method includes receiving an initial defect information from a wafer scanning device indicating potential defects of a semiconductor wafer and determining a boundary region on the semiconductor wafer. The method further includes creating an exclusion region from the boundary region, the exclusion region having a first set of defects in the potential defects of the semiconductor wafer, and creating filtered defect information by removing the first set of defects from the initial defect information. |
申请公布号 |
US2015261908(A1) |
申请公布日期 |
2015.09.17 |
申请号 |
US201514723645 |
申请日期 |
2015.05.28 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HSIEH Min-Hsin;LEE Tsung-Hsien |
分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of generating a set of defect candidates for a wafer, the wafer comprising at least one die manufactured according to a mask, the mask being prepared by combining a plurality of layout areas, the method comprising:
receiving an initial defect information from a wafer scanning device indicating potential defects of a semiconductor wafer; determining a boundary region on the semiconductor wafer; creating an exclusion region from the boundary region, the exclusion region having a first set of defects in the potential defects of the semiconductor wafer; and creating filtered defect information by removing the first set of defects from the initial defect information. |
地址 |
Hsinchu TW |