METHODS OF PREPARING LAYOUTS FOR SEMICONDUCTOR DEVICES, PHOTOMASKS FORMED USING THE LAYOUTS, AND SEMICONDUCTOR DEVICES FABRICATED USING THE PHOTOMASKS

摘要

Methods of preparing layouts for semiconductor devices and semiconductor devices fabricated using the layouts are provided. Preparing the layouts for semiconductor devices may include disposing assistant patterns near a main gate pattern that is provided on a weak active pattern. The weak active pattern may be, for example, an outermost one of active patterns and may be one expected to have an increased width during a fabrication process.

主权项

1. A semiconductor device, comprising:
a substrate; a device isolation layer provided in the substrate to define a first active region, a second active region and a third active region that are disposed adjacent each other, the second active region laterally protruding from outermost edges of the first and third active regions; and a gate electrode crossing the second active region, wherein: the gate electrode comprises first and second sidewalls crossing the second active region and facing each other; the second active region is disposed between the first active region and third active region and includes first and second ends that are opposite each other and are adjacent the first sidewall and the second sidewall, respectively; the first sidewall and the second sidewall have different widths; and the first end and the second end have different widths.