发明名称 LAMINATED SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 Disclosed is a laminated semiconductor integrated circuit device, wherein a three-dimensional space for lamination is reduced with a low-cost configuration, and sufficient power supply qualities are ensured. A first semiconductor integrated circuit device is provided with: a first penetrating semiconductor region, which penetrates a first semiconductor base body in the thickness direction, and which is connected to a first power supply potential; and a second penetrating semiconductor region that is connected to a second power supply potential. A second semiconductor integrated circuit device is laminated to the first semiconductor integrated circuit device, said second semiconductor integrated circuit device having a first electrode and a second electrode that are connected to the first penetrating semiconductor region and the second penetrating semiconductor region, respectively.
申请公布号 WO2015136821(A1) 申请公布日期 2015.09.17
申请号 WO2014JP84492 申请日期 2014.12.26
申请人 KEIO UNIVERSITY 发明人 KURODA, TADAHIRO
分类号 H01L21/3205;H01L21/768;H01L23/522;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L21/3205
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