| 摘要 |
Provided is an acoustic wave device that has an IDT electrode having a thicker wavelength normalized thickness, in terms of aluminum (Al), than before and can be easily manufactured. This acoustic wave device (1) has an IDT electrode (3) disposed on a main surface (2a) of an LiTaO3 substrate (2) and utilizes plate wave in an SH0 mode, that is, a basic mode composed primarily of an SH wave. The wavelength normalized thickness of the LiTaO3 substrate (2) that is normalized by a frequency defined by the pitch of electrode fingers of the IDT electrode (3) of the LiTaO3 substrate (2) and the wavelength normalized thickness of the IDT electrode (3) in terms of Al satisfy either one of the combinations in table 1 shown below. |
