发明名称 MANUFACTURING METHOD OF MAGNETIC MEMORY DEVICE AND MANUFACTURING APPARATUS OF MAGNETIC MEMORY DEVICE
摘要 According to one embodiment, a method of manufacturing a magnetic memory device, includes accommodating, in an etching chamber, a substrate with a stacked film including a magnetic layer, etching at least a part of the stacked film in the etching chamber to form a columnar structure, and transferring the substrate with the columnar structure from the etching chamber to a transfer chamber in which a reducing purge gas is supplied.
申请公布号 US2015263272(A1) 申请公布日期 2015.09.17
申请号 US201414456883 申请日期 2014.08.11
申请人 TOMIOKA Kazuhiro 发明人 TOMIOKA Kazuhiro
分类号 H01L43/12;H01J37/32 主分类号 H01L43/12
代理机构 代理人
主权项 1. A method of manufacturing a magnetic memory device, comprising: accommodating, in an etching chamber, a substrate with a stacked film including a magnetic layer; etching at least a part of the stacked film in the etching chamber to form a columnar structure; and transferring the substrate with the columnar structure from the etching chamber to a transfer chamber in which a reducing purge gas is supplied.
地址 Seoul KR