发明名称 OPTICAL SEMICONDUCTOR ELEMENT
摘要 An optical semiconductor element includes a first nitride semiconductor layer of a first conductivity type, a second nitride semiconductor layer of a second conductivity type, and an active layer provided between the first nitride semiconductor layer and the second nitride semiconductor layer. In the optical semiconductor element, a feature is provided in the active layer, and the second nitride semiconductor layer is provided within the feature of the active layer.
申请公布号 US2015263232(A1) 申请公布日期 2015.09.17
申请号 US201414475517 申请日期 2014.09.02
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SHIODA Tomonari;TACHIBANA Koichi
分类号 H01L33/24;H01S5/343;H01L33/06;H01L33/32;H01L33/00 主分类号 H01L33/24
代理机构 代理人
主权项 1. An optical semiconductor element, comprising: a first nitride semiconductor layer of a first conductivity type; an active layer having a first surface disposed on the first nitride semiconductor layer, the active layer having a feature extending from a second surface that is parallel and opposite the first surface into the active layer; and a second nitride semiconductor layer of a second conductivity type disposed on the second surface of the active layer and having a portion filling the feature in the active layer, wherein the active layer has a thickness between the first nitride semiconductor layer and the portion of the second nitride semiconductor layer is greater than zero and less than a distance between the first and second surfaces.
地址 Tokyo JP