发明名称 |
OPTICAL SEMICONDUCTOR ELEMENT |
摘要 |
An optical semiconductor element includes a first nitride semiconductor layer of a first conductivity type, a second nitride semiconductor layer of a second conductivity type, and an active layer provided between the first nitride semiconductor layer and the second nitride semiconductor layer. In the optical semiconductor element, a feature is provided in the active layer, and the second nitride semiconductor layer is provided within the feature of the active layer. |
申请公布号 |
US2015263232(A1) |
申请公布日期 |
2015.09.17 |
申请号 |
US201414475517 |
申请日期 |
2014.09.02 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIODA Tomonari;TACHIBANA Koichi |
分类号 |
H01L33/24;H01S5/343;H01L33/06;H01L33/32;H01L33/00 |
主分类号 |
H01L33/24 |
代理机构 |
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代理人 |
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主权项 |
1. An optical semiconductor element, comprising:
a first nitride semiconductor layer of a first conductivity type; an active layer having a first surface disposed on the first nitride semiconductor layer, the active layer having a feature extending from a second surface that is parallel and opposite the first surface into the active layer; and a second nitride semiconductor layer of a second conductivity type disposed on the second surface of the active layer and having a portion filling the feature in the active layer, wherein the active layer has a thickness between the first nitride semiconductor layer and the portion of the second nitride semiconductor layer is greater than zero and less than a distance between the first and second surfaces. |
地址 |
Tokyo JP |