MULTIGATE DUAL WORK FUNCTION DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

According to one embodiment, a semiconductor device includes a drain region, a source region, a channel region, a first gate insulator film provided on the channel region, a second gate insulator film provided on the channel region to be adjacent to the first gate insulator film on the source region side of the first gate insulator film, a first gate electrode provided on the first gate insulator film, and a second gate electrode provided on the second gate insulator film. An electrical thickness of the second gate insulator film is less than an electrical thickness of the first gate insulator film. A portion of the first gate electrode is provided on the second gate insulator film. A work function of the second gate electrode is higher than a work function of the first gate electrode.

主权项

1. A semiconductor device, comprising:
a drain region of a first conductivity type; a source region of the first conductivity type; a channel region of a second conductivity type provided between the drain region and the source region; a first gate insulator film provided on the channel region; a second gate insulator film provided on the channel region to be adjacent to the first gate insulator film on a source region side of the first gate insulator film, an electrical thickness of the second gate insulator film being less than an electrical thickness of the first gate insulator film; a first gate electrode provided on the first gate insulator film, a portion of the first gate electrode being provided on the second gate insulator film; and a second gate electrode provided on the second gate insulator film, a work function of the second gate electrode being higher than a work function of the first gate electrode.