SEMICONDUCTOR DEVICE

摘要

According to one embodiment, a semiconductor device includes a first semiconductor layer; a second semiconductor layer having a larger band gap than the first semiconductor layer; a third semiconductor layer having a smaller band gap than the second semiconductor layer; a first electrode being in contact with the third semiconductor layer; a second electrode being in contact with the third semiconductor layer; and a third electrode provided between the third semiconductor layer in contact with the first electrode, the second semiconductor layer directly below the first electrode, and the first semiconductor layer directly below the first electrode, and the third semiconductor layer in contact with the second electrode, the second semiconductor layer directly below the second electrode, and the first semiconductor layer directly below the second electrode, being in contact with the third semiconductor layer, the second semiconductor layer, and the first semiconductor layer via insulating film.

主权项

1. A semiconductor device comprising:
a first semiconductor layer including a nitride semiconductor; a second semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a larger band gap than the first semiconductor layer, and the second semiconductor layer including a nitride semiconductor; a third semiconductor layer provided on the second semiconductor layer, the third semiconductor layer having a smaller band gap than the second semiconductor layer, and the third semiconductor layer including a nitride semiconductor; a first electrode provided on the second semiconductor layer, and the first electrode being in contact with the third semiconductor layer; a second electrode provided on the second semiconductor layer, and the second electrode being in contact with the third semiconductor layer; and a third electrode provided between the third semiconductor layer in contact with the first electrode, the second semiconductor layer directly below the first electrode, and the first semiconductor layer directly below the first electrode and the third semiconductor layer in contact with the second electrode, the second semiconductor layer directly below the second electrode, and the first semiconductor layer directly below the second electrode, the third electrode being in contact with the third semiconductor layer, the second semiconductor layer, and the first semiconductor layer via an insulating film, and the third electrode not being provided on the third semiconductor layer.