THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

According to one embodiment, a thin-film transistor comprises an oxide semiconductor layer formed on a part of a substrate, a first gate insulator film of a silicon dioxide film formed on the oxide semiconductor layer and by the CVD method with a silane-based source gas, a second gate insulator film of a silicon dioxide film formed on the first gate insulator film by the CVD method with a TEOS source gas, and a gate electrode formed on the second gate insulator film.

主权项

1. A method for manufacturing a thin-film transistor comprising:
forming an oxide semiconductor layer on a part of a substrate; forming a first gate insulator film of a silicon dioxide film on the oxide semiconductor layer and the substrate to cover end portions of the oxide semiconductor layer, by the CVD method with a silane-based source gas; forming a second gate insulator film of a silicon dioxide film on the first gate insulator film by the CVD method with a TEOS source gas; and forming a gate electrode on the second gate insulator film.