发明名称 |
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME |
摘要 |
A silicon carbide substrate includes a first impurity region, a well region in contact with the first impurity region, and a second impurity region separated from the first impurity region by the well region. A first main surface includes a first region in contact with a channel region, and a second region different from the first region. A silicon-containing material is formed on the second region. A first silicon dioxide region is formed on the first region. A second silicon dioxide region is formed by oxidizing the silicon-containing material. A gate runner is electrically connected to a gate electrode and formed in a position facing the second silicon dioxide region. Consequently, a silicon carbide semiconductor device capable of achieving improved insulation performance between the gate runner and the substrate while the surface roughness of the substrate is suppressed, and a method of manufacturing the same can be provided. |
申请公布号 |
US2015263115(A1) |
申请公布日期 |
2015.09.17 |
申请号 |
US201314439144 |
申请日期 |
2013.10.08 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
Hiyoshi Toru;Saitoh Yu |
分类号 |
H01L29/423;H01L29/06;H01L21/04;H01L29/78;H01L29/51;H01L29/16;H01L29/66 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a silicon carbide semiconductor device, comprising the step of preparing a silicon carbide substrate including a first main surface and a second main surface facing each other,
said silicon carbide substrate including a first impurity region having a first conductivity type, a well region being in contact with said first impurity region and having a second conductivity type different from said first conductivity type, and a second impurity region separated from said first impurity region by said well region and having said first conductivity type, said first main surface including a first region in contact with a channel region sandwiched between said first impurity region and said second impurity region, and a second region different from said first region, said method further comprising the steps of: forming a silicon-containing-material on said second region; forming a first silicon dioxide region on said first region; forming a second silicon dioxide region by oxidizing said silicon-containing-material; forming a gate electrode in contact with said first silicon dioxide region and said second silicon dioxide region; and forming a gate runner electrically connected to said gate electrode and arranged in a position facing said second silicon dioxide region, the thickness of said second silicon dioxide region being greater than the thickness of said first silicon dioxide region. |
地址 |
Osaka JP |