NON-PLANAR SEMICONDUCTOR DEVICE WITH P-N JUNCTION LOCATED IN SUBSTRATE

摘要

A non-planar diode is fabricated, with an n- or p-type raised structure, such as a fin, coupled to the substrate. A well of an opposite type is located under the raised structure, along with an area having additional impurity, located directly under the raised structure, and within the well. This additional implant creates a p-n junction within the substrate, the non-planar diode having an ideality factor in a range of 1 to about 1.05.

主权项

1. A method, comprising:
providing a non-planar semiconductor structure, the structure comprising: a semiconductor substrate, one or more raised semiconductor structures of n or p-type coupled to the substrate; a well of a type opposite that of the one or more raised structures and located in the substrate under the one or more raised structures; and creating an area of one or more additional impurities of a same type as the one or more raised structures, the area being located in the well directly under the one or more raised structures, wherein the area occupies less space than the well, and wherein there is an absence of p-n junctions in the one or more raised structures.