VARIABLE RESISTANCE MEMORY AND THE METHOD OF CONTROLLING THE SAME

摘要

According to one embodiment, a variable resistance memory including a bit line extending in a first direction, a word line extending in a second direction, and a memory cell array including memory cells, each of the memory cells including a variable resistance element and a selective transistor, the element being configured to store two-bit data using a change in resistance, the element being connected to the bit line, a gate of the selective transistor being connected to the word line, wherein a first and a second write current are selectively applied to the element, to enable the data to be written, and a first and a second read current are selectively applied to the element, to enable the data to be read.

主权项

1. A variable resistance memory comprising:
a bit line extending in a first direction; a first word line extending in a second direction intersecting with the first direction; and a memory cell array including memory cells arranged in a matrix, each of the memory cells including a variable resistance element and at least one selective transistor, the variable resistance element being configured to store two-bit data using a change in resistance, the variable resistance element having an end connected to the bit line, and another end connected to a drain of the selective transistor, a source of the selective transistor being connected to a source line, a gate of the selective transistor being connected to the first word line, wherein a first write current and a second write current being greater than the first write current are selectively applied to the variable resistance element using the selective transistor, to enable the data to be written; and a first read current and a second read current being greater than the first read current are selectively applied to the variable resistance element using the selective transistor, to enable the data to be read.