发明名称 IR CUT FILTER, METHOD FOR MANUFACTURING THE SAME, AND SOLID-STATE IMAGING DEVICE
摘要 A solid-state imaging device comprises a CMOS sensor, a circuit board, a ceramic plate, an IR cut filter, a taking lens, a lens holder, and a support barrel. The CMOS sensor is mounted on the circuit board. The circuit board is fixed to the ceramic plate such that the CMOS sensor is placed inside an opening of the ceramic plate. The sides of the CMOS sensor are surrounded by the ceramic plate. The IR cut filter is fixed to the ceramic plate so as to cover the opening. The CMOS sensor is disposed behind the taking lens. The IR cut filter is disposed between the taking lens and the CMOS sensor. A light-shielding layer is formed over the entire periphery of edge portions of an incident surface of the IR cut filter. Harmful rays such as reflective light is blocked by the light-shielding layer.
申请公布号 US2015260886(A1) 申请公布日期 2015.09.17
申请号 US201514728458 申请日期 2015.06.02
申请人 FUJIFILM CORPORATION 发明人 HIGUCHI Reiji;MURAYAMA Satoru
分类号 G02B5/20;H01L27/146;G02B1/12 主分类号 G02B5/20
代理机构 代理人
主权项 1. An IR cut filter disposed and used on a light receiving surface side of a solid-state imaging element comprising: a filter body for cutting IR light of subject light traveling toward the light receiving surface; and a light-shielding layer formed over at least one of an edge portion of an incident surface of the filter body and a side end face of the filter body and blocking visible light, the light-shielding layer including a layer in which the size of a polymerizable composition particle is small and a low reflective layer in which the size of the polymerizable composition particle is large.
地址 Tokyo JP