发明名称 MAGNETIC MEMORY DEVICE
摘要 According to one embodiment, a magnetic memory device includes a stacked structure including a magnetic element, a protective insulating film covering the stacked structure, and an interface layer provided at an interface between the stacked structure and the protective insulating film. The interface layer contains a predetermined element which is not contained in the magnetic element or the protective insulating film.
申请公布号 US2015263265(A1) 申请公布日期 2015.09.17
申请号 US201414479192 申请日期 2014.09.05
申请人 YOSHIKAWA Masatoshi;YODA Hiroaki;TSUBATA Shuichi;NOMA Kenji;KISHI Tatsuya;SETO Satoshi;TOMIOKA Kazuhiro 发明人 YOSHIKAWA Masatoshi;YODA Hiroaki;TSUBATA Shuichi;NOMA Kenji;KISHI Tatsuya;SETO Satoshi;TOMIOKA Kazuhiro
分类号 H01L43/02;H01L43/10;H01L43/08 主分类号 H01L43/02
代理机构 代理人
主权项 1. A magnetic memory device comprising: a stacked structure including a magnetic element; a protective insulating film covering the stacked structure; and an interface layer provided at an interface between the stacked structure and the protective insulating film, wherein the interface layer contains a predetermined element which is not contained in the magnetic element or the protective insulating film.
地址 Seoul KR