发明名称 SEMICONDUCTOR LIGHT EMITTING ELEMENT
摘要 A light emitting element includes a first semiconductor layer of a first conductive type, a second semiconductor layer of a second conductive type, a light emitting layer. The light emitting layer is between the first semiconductor layer and the second semiconductor layer. A first electrode layer is on a first side of the second semiconductor layer. A second electrode layer is on the first side of the first semiconductor layer. Am insulation layer is between the first electrode layer and the second electrode layer. A first metal layer is between a substrate and the insulation layer and between the substrate and the second electrode layer. The second electrode layer includes a first portion contacting the first semiconductor layer and a second portion which spaced from the first semiconductor layer.
申请公布号 US2015263236(A1) 申请公布日期 2015.09.17
申请号 US201414475498 申请日期 2014.09.02
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SUZUKI Takeyuki
分类号 H01L33/38;H01L33/40;H01L33/32 主分类号 H01L33/38
代理机构 代理人
主权项 1. A light emitting element, comprising: a first semiconductor layer of a first conductive type and having a first side and a second side opposite the first side; a second semiconductor layer of a second conductive type on the first side of the first semiconductor layer; a light emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode layer contacting the second semiconductor layer, the second semiconductor layer being between first electrode layer and the light emitting layer; a second electrode layer contacting the first semiconductor layer on the first side along a first part of a surface of the first semiconductor layer; an insulation layer between the first electrode layer and the second electrode layer, contacting a second part of the surface of the first semiconductor layer, and being between the second semiconductor layer and the second electrode layer, the second part of the surface surrounding the first part of the surface; and a first metal layer between a substrate and the insulation layer and between the substrate and the second electrode layer, wherein the second electrode layer includes a first portion contacting the first part of the surface of the first semiconductor layer, and a second portion adjacent to first portion in a direction parallel to the surface, the second portion being spaced from the surface of the first semiconductor layer in a direction perpendicular to the surface, and a thickness of the first metal layer between the substrate and the first portion of the second electrode layer is greater than a thickness of the first metal layer between the substrate and the second portion of the second electrode layer and the substrate.
地址 Tokyo JP