| 发明名称 |
SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A semiconductor storage device includes a semiconductor substrate; an active region provided in the semiconductor substrate and extending in a first direction; and a plurality of gates provided above the active region and extending in a second direction. The gates are provided with a stack of a floating gate and a control gate, and an elevated portion is provided above the active region disposed between adjacent gates. |
| 申请公布号 |
US2015263161(A1) |
申请公布日期 |
2015.09.17 |
| 申请号 |
US201414581156 |
申请日期 |
2014.12.23 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
YAGISHITA Atsushi |
| 分类号 |
H01L29/788;H01L21/28;H01L21/02;H01L29/66;H01L29/06 |
主分类号 |
H01L29/788 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor storage device comprising:
a semiconductor substrate; an active region provided in the semiconductor substrate and extending in a first direction; and a plurality of gates provided above the active region and extending in a second direction; the gates being provided with a stack of a floating gate and a control gate, and an elevated portion provided above the active region disposed between adjacent gates. |
| 地址 |
Minato-ku JP |
