发明名称 |
RRAM ARRAY HAVING LATERAL RRAM CELLS AND VERTICAL CONDUCTING STRUCTURES |
摘要 |
An RRAM array is provided. The RRAM array includes a plurality of horizontal electrode lines elongated in a horizontal direction. The RRAM array also includes a plurality of conducting structures elongated in a vertical direction. Each of the conducting structures includes a plurality of electrode blocks and a plurality of contact vias which are alternately arranged. The electrode blocks and the electrode lines are on the same horizontal planes. The RRAM array further includes a plurality of resistance variable elements sandwiched between the electrode lines and the electrode blocks. |
申请公布号 |
US2015263073(A1) |
申请公布日期 |
2015.09.17 |
申请号 |
US201414204388 |
申请日期 |
2014.03.11 |
申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd |
发明人 |
LIN Hsing-Chih |
分类号 |
H01L27/24;H01L45/00 |
主分类号 |
H01L27/24 |
代理机构 |
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代理人 |
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主权项 |
1. An RRAM array, comprising:
a plurality of horizontal electrode lines elongated in a horizontal direction; a plurality of conducting structures elongated in a vertical direction, wherein each of the conducting structures comprises a plurality of electrode blocks and a plurality of contact vias which are alternately arranged, and wherein the electrode blocks and the electrode lines are on the same horizontal plane; and a plurality of resistance variable elements sandwiched between the electrode lines and the electrode blocks. |
地址 |
Hsin-Chu TW |