发明名称 RRAM ARRAY HAVING LATERAL RRAM CELLS AND VERTICAL CONDUCTING STRUCTURES
摘要 An RRAM array is provided. The RRAM array includes a plurality of horizontal electrode lines elongated in a horizontal direction. The RRAM array also includes a plurality of conducting structures elongated in a vertical direction. Each of the conducting structures includes a plurality of electrode blocks and a plurality of contact vias which are alternately arranged. The electrode blocks and the electrode lines are on the same horizontal planes. The RRAM array further includes a plurality of resistance variable elements sandwiched between the electrode lines and the electrode blocks.
申请公布号 US2015263073(A1) 申请公布日期 2015.09.17
申请号 US201414204388 申请日期 2014.03.11
申请人 Taiwan Semiconductor Manufacturing Co., Ltd 发明人 LIN Hsing-Chih
分类号 H01L27/24;H01L45/00 主分类号 H01L27/24
代理机构 代理人
主权项 1. An RRAM array, comprising: a plurality of horizontal electrode lines elongated in a horizontal direction; a plurality of conducting structures elongated in a vertical direction, wherein each of the conducting structures comprises a plurality of electrode blocks and a plurality of contact vias which are alternately arranged, and wherein the electrode blocks and the electrode lines are on the same horizontal plane; and a plurality of resistance variable elements sandwiched between the electrode lines and the electrode blocks.
地址 Hsin-Chu TW