发明名称 NEGATIVE BITLINE BOOST SCHEME FOR SRAM WRITE-ASSIST
摘要 A device includes a transistor switch coupled between a bit line voltage node and a ground node and a boost signal circuit coupled to a gate node of the transistor switch, where the boost signal circuit providing a boost signal responsive to a write enable signal. The device also includes a first delay element and a first capacitor in series with the first delay element. The first capacitor has a first end coupled to the bit line voltage node and a second end coupled to the gate node through the first delay element.
申请公布号 US2015262655(A1) 申请公布日期 2015.09.17
申请号 US201514727931 申请日期 2015.06.02
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 HSIEH Wei-Jer;LIN Yangsyu;LU Hsiao Wen;CHENG Chiting;CHANG Jonathan Tsung-Yung
分类号 G11C11/419 主分类号 G11C11/419
代理机构 代理人
主权项
地址 Hsin-Chu TW