发明名称 SYSTEMS AND METHODS FOR COOLING AND REMOVING REACTANTS FROM A SUBSTRATE PROCESSING CHAMBER
摘要 A cooling and reactant removal system includes first and second gate valves. An outlet of the first gate valve is arranged in fluid communication with the process volume of the processing chamber. A filter is arranged in fluid communication with an inlet of the first gate valve. An inlet of the second gate valve is arranged in fluid communication with the process volume of the processing chamber. A gas amplifier has a first inlet, a second inlet, an outlet and at least one Coanda surface. Compressed gas received at the first inlet of the gas amplifier is directed across the Coanda surface. The second inlet of the gas amplifier is in fluid communication with the outlet of the second gate valve. The outlet of the gas amplifier is in fluid communication with a scrubbed exhaust system.
申请公布号 US2015260350(A1) 申请公布日期 2015.09.17
申请号 US201414215910 申请日期 2014.03.17
申请人 LAM RESEARCH CORPORATION 发明人 Smith Colin F.
分类号 F17D3/16 主分类号 F17D3/16
代理机构 代理人
主权项 1. A cooling and reactant removal system for a semiconductor processing system, comprising: a processing chamber defining a process volume and comprising one or more pedestals configured to support one or more substrates, respectively, for processing; a first gate valve having an inlet and an outlet, wherein the outlet of the first gate valve is arranged in fluid communication with the process volume of the processing chamber; a filter arranged in fluid communication with the inlet of the first gate valve; a second gate valve having an inlet and an outlet, wherein the inlet of the second gate valve is arranged in fluid communication with the process volume of the processing chamber; a gas amplifier having a first inlet, a second inlet, an outlet and at least one Coanda surface; a source of compressed gas, wherein the first inlet of the gas amplifier is in fluid communication with the compressed source of gas and wherein the compressed gas received at the first inlet is directed across the Coanda surface, wherein the second inlet of the gas amplifier is in fluid communication with the outlet of the second gate valve; and a scrubbed exhaust system, wherein the outlet of the gas amplifier is in fluid communication with the scrubbed exhaust system.
地址 Fremont CA US