| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method and apparatus for manufacturing an artificial crystal, capable of reducing the density of foreign matters in the Z area of the artificial crystal.SOLUTION: A method for manufacturing an artificial crystal 20 comprises the steps of: arranging a crystal seed 10 in a support 30 inside a pressure vessel; and growing the crystal seed 10 into an artificial crystal 20 by a hydrothermal synthesis method. Since many of foreign matters 48 can be captured in a +X area 20+x (when a +X axis direction is up) or a -X area 20-x (when a -X axis direction is up) by fixing the crystal seed 10 to the support 30 in the state that the ±X axis directions thereof are vertical, the density of the foreign matters 48 in a Z area 20z can be accordingly reduced. That is, the foreign matters 48 hardly contact with the Z area 20z grown on each of basic growth surfaces 11 and 12 by selectively capturing and collecting the foreign matters 48 in an alkali solution 44 in the +X area 20+x or the -X area 20-x without serving as a product to reduce the density of the foreign matter 48 in the alkali solution 44, and the density of the foreign matters 48 is reduced in the Z area 20z.</p> |
