SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can inhibit current collapse.SOLUTION: A semiconductor device comprises: a channel layer 3 formed on a semiconductor substrate 1; a barrier layer 4 which is formed on the channel layer 3 and composed of an In-containing nitride semiconductor; a gate electrode 8 partially formed on the barrier layer 4; a chap layer 5 which is partially formed on the barrier layer 4 and composed of a nitride semiconductor; and a drain electrode 7 partially formed on the cap layer 5. An end of the gate electrode 8 on the side near the drain electrode 7 and the cap layer 5 are formed at a distance from each other.