WIRING SUBSTRATE AND SEMICONDUCTOR DEVICE USING THE SAME

摘要

According to one embodiment, a wiring substrate includes a second wiring layer, including a plurality of metal lands provided on a second surface of an insulating base material, and an insulating layer formed on the second surface of the insulating base material and including openings exposing the plurality of metal lands. The metal land includes a center portion with a first height and an outer peripheral portion with a second height lower than the first height, which is provided at least about the periphery of the insulating base. The openings expose the metal lands, such that the center portion of the metal land is exposed and at least a portion of the outer peripheral portion of the metal land is covered with the insulating layer.

主权项

1. A wiring substrate comprising:
an insulating base material having a first surface and a second surface; a first wiring layer provided on the first surface of the insulating base material; a second wiring layer provided on the second surface of the insulating base material and including a plurality of metal lands; and an insulating layer, formed on the second surface of the insulating base material, including openings therein exposing the plural metal lands, wherein of the plural metal lands, at least each of the metal lands provided about the periphery of an area where a semiconductor chip is to be mounted on the insulating base includes a center portion with a first height and an outer peripheral portion with a second height lower than the first height, and the openings in the insulating layer provided about the periphery of an area where a semiconductor chip is to be mounted on the insulating base, expose at least the center portion of the metal lands therein, such that at least a portion of the outer peripheral portion of the metal lands is covered with the insulating layer.