发明名称 |
Semiconductor Device and Method of Dual-Molding Die Formed on Opposite Sides of Build-Up Interconnect Structure |
摘要 |
A semiconductor device has a first interconnect structure. A first semiconductor die has an active surface oriented towards and mounted to a first surface of the first interconnect structure. A first encapsulant is deposited over the first interconnect structure and first semiconductor die. A second semiconductor die has an active surface oriented towards and mounted to a second surface of the first interconnect structure opposite the first surface. A plurality of first conductive pillars is formed over the second surface of the first interconnect structure and around the second semiconductor die. A second encapsulant is deposited over the second semiconductor die and around the plurality of first conductive pillars. A second interconnect structure including a conductive layer and bumps are formed over the second encapsulant and electrically connect to the plurality of first conductive pillars and the first and second semiconductor die. |
申请公布号 |
US2015262977(A1) |
申请公布日期 |
2015.09.17 |
申请号 |
US201514728182 |
申请日期 |
2015.06.02 |
申请人 |
STATS CHIPPAC, LTD. |
发明人 |
Pagaila Reza A. |
分类号 |
H01L25/065;H01L23/31;H01L23/00;H01L25/00;H01L21/56 |
主分类号 |
H01L25/065 |
代理机构 |
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代理人 |
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主权项 |
1. A method of making a semiconductor device, comprising:
providing a first semiconductor die; forming a first interconnect structure over the first semiconductor die; disposing a second semiconductor die over the first interconnect structure opposite the first semiconductor die; and forming a second interconnect structure over the first interconnect structure around the second semiconductor die. |
地址 |
Singapore SG |