发明名称 |
METHOD FOR THE FORMATION OF DIFFERENT GATE METAL REGIONS OF MOS TRANSISTORS |
摘要 |
A method is for forming at least two different gates metal regions of at least two MOS transistors. The method may include forming a metal layer on a gate dielectric layer; and forming a metal hard mask on the metal layer, with the hard mask having a composition different from that of the metal layer and covering a first region of the metal layer and leaving open a second region of the metal layer. The method may also include diffusion annealing the intermediate structure obtained in the prior steps such as to make the metal atoms of the hard mask diffuse into the first region, and removal of the hard mask. |
申请公布号 |
US2015262884(A1) |
申请公布日期 |
2015.09.17 |
申请号 |
US201514636778 |
申请日期 |
2015.03.03 |
申请人 |
STMICROELECTRONICS (CROLLES 2) SAS |
发明人 |
ZOLL Stéphane;GARNIER Philippe;GOURHANT Olivier;JOSEPH Vincent |
分类号 |
H01L21/8234;H01L21/28;H01L21/033;H01L29/49;H01L21/324 |
主分类号 |
H01L21/8234 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
Crolles FR |