| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes a power semiconductor element, a gate pull-down circuit which is connected to a gate terminal of the power semiconductor element, and a gate resistor which is connected between an input terminal of the semiconductor device and the gate terminal of the power semiconductor element. The gate pull-down circuit has a constant current circuit by which electric charges can be extracted from a gate capacitance of the power semiconductor element when a signal inputted to the input terminal has a low level. As a result, the semiconductor device has an improved switching speed and an improved noise resistance. |
| 申请公布号 |
US2015263491(A1) |
申请公布日期 |
2015.09.17 |
| 申请号 |
US201514622319 |
申请日期 |
2015.02.13 |
| 申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
MIYAZAWA Shigemi |
| 分类号 |
H01T15/00;H01L27/06;H01L29/78;H01L49/02;H01L29/739;H01L29/866 |
主分类号 |
H01T15/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a power semiconductor element; a gate pull-down circuit which is connected to a gate terminal of the power semiconductor element; and a gate resistor which is connected between an input terminal of the semiconductor device and the gate terminal of the power semiconductor element, wherein the gate pull-down circuit includes a constant current circuit by which electric charges can be extracted from a gate capacitance of the power semiconductor element when a signal inputted to the input terminal is at a low level. |
| 地址 |
Kawasaki-shi JP |
