LOW-COST SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

The present invention relates to a method for manufacturing a semiconductor device with low costs. The present invention includes the following steps: forming a plurality of well regions on a semiconductor substrate; forming a plurality of gate insulation layers and gate electrodes on the well regions; implanting a blanket ion to the front side of the substrate to form a low density doping (LDD) region on the well regions without a mask; forming a spacer on the sidewall of the gate electrodes; and implanting a high density ion for forming a source region and a drain region with high density near the LDD region. According to the present invention, the breakdown voltage (BVdss) of the semiconductor device is maximized. An on resistance (Rdson) is minimized and manufacturing costs are remarkably reduced at the same time. An LDD masking operation applied to LDMOS, DMOS, and CMOS of a normal BCD process is omitted by applying an incline and rotation co-implant when the source region and the drain region with the high density are formed.