半导体装置及其制造方法;SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

本发明提供一种半导体装置，包括：基底，具有第一导电型，且包括：主体区，具有第一导电型；源极区，形成于主体区中；飘移区，具有第二导电型且邻近主体区，其中第一导电型与第二导电型不同；及汲极区，形成于飘移区中；沟槽，形成于主体区与飘移区之间的基底中；闸极介电层，邻近沟槽；衬层，内衬于沟槽且与闸极介电层邻接；以及闸极电极，形成于闸极介电层上，且延伸入沟槽。本发明亦提供此半导体装置之制造方法。; a source region formed in the body region; a drift region having a second conductivity type adjacent to the body region, wherein the first conductivity type is opposite to the second conductivity type; and a drain region formed in the drift region; a trench formed in the substrate between the body and drift regions; a gate dielectric layer disposed adjacent to the trench; a liner lining the trench and adjoining with the gate dielectric layer; and a gate electrode formed over the gate dielectric layer and extending into the trench. The present disclosure also provides a method for manufacturing the semiconductor device.