发明名称 |
Transistors and methods of manufacturing the same |
摘要 |
<p>Transistors, and methods of manufacturing the transistors, include graphene and a material converted from graphene. The transistor may include a channel layer including graphene and a gate insulating layer including a material converted from graphene. The material converted from the graphene may be fluorinated graphene. The channel layer may include a patterned graphene region. The patterned graphene region may be defined by a region converted from graphene. A gate of the transistor may include graphene.</p> |
申请公布号 |
EP2690664(B1) |
申请公布日期 |
2015.09.16 |
申请号 |
EP20130174783 |
申请日期 |
2013.07.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
LEE, CHANG-SEUNG;KIM, YONG-SUNG;LEE, JOO-HO;JUNG, YONG-SEOK |
分类号 |
H01L29/66;H01L29/16;H01L29/49;H01L29/786 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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