加厚之应力缓冲及功率分配层;THICKENED STRESS RELIEF AND POWER DISTRIBUTION LAYER

摘要

一实施例包括一种半导体结构，包含：一前端部分包括一装置层；一后端部分包括一金属底层、一金属顶层及介于该金属底层及该金属顶层之间的一金属中间层；其中(a)金属顶层包括一第一厚度垂直于该金属顶层所在之水平面，该金属底层包括一第二厚度；及该金属中间层包括一第三厚度；以及(b)该第一厚度大于或等于该第二厚度及该第三厚度之一总合。其它实施例将在文中描述。; a backend portion including a bottom metal layer, a top metal layer, and intermediate metal layers between the bottom and top metal layers; wherein (a) the top metal layer includes a first thickness that is orthogonal to the horizontal plane in which the top metal layer lies, the bottom metal layer includes a second thickness; and the intermediate metal layers includes a third thickness; and (b) the first thickness is greater than or equal to a sum of the second and third thicknesses. Other embodiments are described herein.