化学机械硏磨矽晶圆之方法;METHOD FOR CHEMICAL MECHANICAL POLISHING SILICON WAFERS

摘要

提供一种研磨矽晶圆之方法，其系包含：提供矽晶圆；提供具有研磨层之研磨垫，该研磨层系包含下述者之原材料组分的反应产物：多官能异氰酸酯以及固化剂包，其中，该固化剂包系含有胺起始之多元醇固化剂及高分子量多元醇固化剂；其中，该研磨层系显现大于0.4g/cm 3 之密度，Shore D硬度为5至40，断裂伸长率为100至450%，以及，切割速率为25至150μm/hr，其中，该研磨层系具有经调适用于研磨该矽晶圆之研磨表面；以及，于该研磨表面与该矽晶圆之间产生动态接触。; providing a polishing pad having a polishing layer which is the reaction product of raw material ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.4 g/cm 3 ; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 μm/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the silicon wafer; and, creating dynamic contact between the polishing surface and the silicon wafer.