| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for forming a barrier layer, by which a barrier layer exhibiting sufficient barrier performance can be formed with satisfactory productivity even when the barrier layer is interposed between conductive layers comprising dissimilar metals. <P>SOLUTION: The method for forming a barrier layer BM includes the steps of: arranging a work piece W with one conductive layer CL1 and a target 2, for example made of Ti, inside a vacuum processing chamber 1a, introducing rare gas in the vacuum processing chamber to form a plasma atmosphere, and sputtering the target to form a first metal layer on a surface of the one conductive layer; introducing gas containing oxygen gas and nitrogen gas in the vacuum processing chamber to form a plasma atmosphere and oxynitriding a surface of the first metal layer while also exposing the target to the plasma atmosphere so that a surface of the target is oxynitrided; and further introducing the rare gas in the vacuum processing chamber to form a plasma atmosphere and sputtering the target to form a second metal layer on the oxynitrided surface. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
