发明名称 |
SUB-BAND INFRA-RED IRRADIATION FOR DETECTOR CRYSTALS |
摘要 |
The invention relates to radiation detection with a directly converting semiconductor layer for converting an incident radiation into electrical signals. Sub-band infra-red (IR) irradiation considerably reduces polarization in the directly converting semi-conductor material when irradiated, so that counting is possible at higher tube currents without any baseline shift. An IR irradiation device is integrated into the readout circuit to which the crystal is flip-chip bonded in order to enable 4-side-buttable crystals. |
申请公布号 |
EP2917766(A1) |
申请公布日期 |
2015.09.16 |
申请号 |
EP20130799686 |
申请日期 |
2013.11.08 |
申请人 |
KONINKLIJKE PHILIPS N.V.;PHILIPS GMBH |
发明人 |
HERRMANN, CHRISTOPH;STEADMAN BOOKER, ROGER |
分类号 |
G01T1/24 |
主分类号 |
G01T1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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