BLANKMASK FOR EXTREME ULTRA-VIOLET LITHOGRAPHY AND PHOTOMASK USING THE SAME

摘要

According to the present invention, a reflection-type blank mask using EUV light and a photomask using the same are capable of securing required optical properties by controlling a kind and a composition ratio of a metal and a light element composed of an absorption film, and performing film thinning of the absorption film at the same time. Accordingly, the mask is capable of reducing generation of shadowing effects, and minimizing a deviation of a critical value in a horizontal-vertical pattern, regarding performance of a pattern below a level of 20 nm, particularly, below a level of 14 nm. In addition, provided is a high quality photomask for extreme ultraviolet light, with improved chemical resistance and durability of an absorption film with respect to a cleansing solution, regarding a cleansing process using a cleansing solution performed during a manufacturing process of a photomask.