| 摘要 |
An embodiment of the present invention provides a semiconductor device having a simple manufacturing process and stable structure, and a manufacturing method thereof. The semiconductor device includes: insulating films stacked as a step format; and conductive films, in which a protrusion is formed at a side wall of the second area, for comprising a first area interposed between the insulating films, and a second area protruding between the top of the insulating film, and the bottom of the insulating film by being extended from the first area. |
