| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device that is manufactured using a bulk CMOS process and in which a solar cell capable of generating high voltage and a semiconductor integrated circuit are disposed in an identical semiconductor substrate. <P>SOLUTION: In a semiconductor device 1, a semiconductor integrated circuit 40, a first solar cell 10, and a second solar cell 20 are disposed in an identical semiconductor substrate 100. The first solar cell 10 and the second solar cell 20 each include a plurality of semiconductor regions stacked by being embedded in a portion of upper portion of the semiconductor substrate 100 so that the bottom surface and the side surfaces of an interior semiconductor region are surrounded by a semiconductor region with a different conductivity type from the interior semiconductor region. The first solar cell 10 and the second solar cell 20 are serially connected so that p-n junctions included in the first solar cell 10 and the second solar cell 20 are serially connected. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
