Method of forming heterojunction tranistors including energy barriers

摘要

A heterojunction transistor may include a channel layer (14) comprising a Group III nitride, a barrier layer (16) comprising a Group III nitride on the channel layer, and an energy barrier (30, 32, 34) comprising a layer of a Group III nitride including indium on the channel layer such that the channel layer is between the barrier layer and the energy barrier. The barrier layer may have a bandgap greater than a bandgap of the channel layer, and a concentration of indium (In) in the energy barrier may be greater than a concentration of indium (In) in the channel layer. Related methods are also discussed.