| 摘要 |
<p>The present invention relates to a method for manufacturing a thin film, which manufactures a prescribed thin film using at least one process gas. The present invention provides the method for manufacturing the thin film, which performs a process such as a thin film deposition and a thin film etching and the like, using at least one process gas in a response chamber. The present invention relates to the method for manufacturing the thin film, which is capable of improving process uniformity in a whole area on a substrate. The present invention provides the method for manufacturing the thin film, which is capable of reducing the feed rate of the process gas and improving process uniformity of a large area substrate. The present invention suggests the method for manufacturing the thin film, by which the thin film is formed by interrupting or reducing the supply of at least one process gas periodically or intermittently, wherein the supply time is longer than or equal to an interrupting or reducing time.</p> |
