| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce particles generated during plasm ignition and extinction in a plasma-separation-type plasma processing device. <P>SOLUTION: A wafer 20 is provided on a support base 31, and starts to be processed by an etching device 10. When a plasma is ignited, an opening/closing valve 73 of a gas transport part 70 is closed and an opening/closing valve 84 is opened by a control part 85, and a gas passage is on a bypass part 80 side. By applying a high frequency power to a plasma source 62 from a power source 61 of a plasma generation part 60, active gas is generated in a discharge tube 63. When a stand-by time is completed and ignition of the plasma is completed, the control part 85 opens the opening/closing valve 73 of the gas transport part 70 and closes the opening/closing valve 84 of the bypass part 80, and the gas passage is on a vacuum processing chamber 30 side. The active gas is introduced to the vacuum processing chamber 30, and processing of the wafer 20 with the active gas is started. During an operation for exchanging the wafer to be processed next, the control part 85 switches the gas passage to the bypass part side again. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
