ＩＴＯ溅镀钯材及其制造方法;ITO SPUTTERING TARGET MATERIAL AND METHOD OF MANUFACTURING THE SAME

摘要

本发明系关于一种ITO烧结体、及包含该ITO烧结体之ITO溅镀靶材，该ITO烧结体之Sn含量换算SnO2量为2.5至10.0质量%，该ITO烧结体具有In2O3母相与存在于该In2O3母相之粒界之In4Sn3O12相，相对密度为98.0%以上，前述In2O3母相之平均粒径为17μm以下，该ITO烧结体的剖面中之前述In4Sn3O12相之面积率为0.4%以上。本发明之ITO烧结体在加工步骤中不易产生破裂、变形等。本发明之ITO溅镀靶材在对基材之接合步骤中不易产生破裂、变形等。因此，本发明之ITO烧结体及ITO溅镀靶材可提升制造产率。;The sintered ITO of this invention will not be easily broken and deformed during working process. ;The ITO sputtering target material of this invention will not be easily broken and deformed during the process of connecting to substrate. ;Therefore, the sintered ITO and the ITO sputtering target material of this invention render an improvement to the manufacturing yield.