| 摘要 |
It is an object to provide a semiconductor light emitting diode capable of suppressing peeling at a pad portion during wire bonding while maintaining the improvement in the output of the light emitting diode due to a reflective layer and a light transmitting insulating layer provided right under the pad. It is another object of the present invention to provide a method of manufacturing the same. A semiconductor light emitting diode 100 of the present invention includes a semiconductor layer including a light emitting portion, and a pad electrode 105 located on the semiconductor layer 104, the semiconductor light emitting diode 100 further including, between the semiconductor layer 104 and the pad electrode 105, a reflective portion 108 including a light transmitting insulating layer 106 serving as a current blocking layer located on the semiconductor layer 104, and a reflective layer 107 located on the light transmitting insulating layer 106; a contact portion formed from an ohmic electrode 109 in contact with the reflective portion 108, located on the semiconductor layer 104; and a conductive hard film 110 between the reflective layer 107 and the pad electrode 105, the conductive hard film 110 having HV × t > 630, where the Vickers hardness is HV (Hv) and the thickness is t (µm). |
