| 摘要 |
<p>Provided are: an alloy for soft magnetic film layers, which has low saturation magnetic flux density and is to be used in a magnetic recording medium; and a sputtering target material. This alloy contains one or more elements selected from the group consisting of Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Ni, Cu, Al, B, C, Si, P, Zn, Ga, Ge and Sn, with the balance made up of Co and Fe, while satisfying, in at%, the following formulae (1)-(3). (1) 0.50 <= Fe%/(Fe% + Co%) <= 0.90 (2) 5 <= TAM <= 25 (3) 15 <= TAM + TNM <= 25 In this connection, the above-mentioned TAM and TNM are respectively defined as TAM = Y% + Ti% + Zr% + Hf% + V% + Nb% + Ta% + B%/2 and TNM = Cr% + Mo% + W% + Mn% + Ni%/3 + Cu%/3 + Al% + C% + Si% + P% + Zn% + Ga% + Ge% + Sn%.</p> |
