| 摘要 |
<p>Embodiments disclosed in the present invention relates to formation of dielectric materials on features of the high aspect ratio. In an embodiment, disclosed is a method for filling trenches of high aspect ratio in a single processing chamber. The method comprises the step of arranging a substrate in the processing chamber, the substrate has a surface having trenches having high aspect ratio, and the surface faces a gas/plasma distribution assembly. The method further comprises the step of performing a sequence of depositing a layer of a dielectic material on the surface of the substrate and in each of the multiple trenches, and removing a part of the layer of the dielectric material arranged on the surface of the substrate, wherein the layer of the dielectric material is placed on the bottom and sidewalls of each trench, and each opening of the trenches is widened. The sequence is repeated until the dielectric material uniformly fills the trenches.</p> |
