半导体装置及其制造方法;SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

一种半导体装置，包括：一半导体层，具有一第一导电类型；数个第一掺杂区，沿一第一方向而平行且分隔地设置于该些半导体层之一部中，其中该些第一掺杂区具有相反于该第一导电类型之一第二导电类型以及长方形之一形状；一闸极结构，沿一第二方向而设置于该半导体层之一部上，覆盖该些掺杂区之一部；一第二掺杂区，沿该第二方向而设置于该半导体层内并邻近该闸极结构之一第一侧，具有该第二导电类型；以及一第三掺杂区，沿该第二方向而设置于相对于该闸极结构第一侧之一第二侧之该半导体层内并邻近该些掺杂区，具有该第二导电类型。; a plurality of first doped regions separately and parallelly disposed in a portion of the semiconductor layers along a first direction, having a second conductivity type opposite to the first conductivity type and a rectangular top view; a gate structure disposed over a portion of the semiconductor layer along a second direction, covering a portion of the doped regions; a second doped region formed in the semiconductor layer along the second direction and being adjacent to a first side of the gate structure, having the second conductivity type; and a third doped region formed in the the semiconductor layer along the second direction and being adjacent to a second side of the gate structure opposing the first side thereof, having the second conductivity type.